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MC10SX1130DG Scheda tecnica(PDF) 8 Page - ON Semiconductor |
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MC10SX1130DG Scheda tecnica(HTML) 8 Page - ON Semiconductor |
8 / 9 page MC10SX1130 http://onsemi.com 8 Now to calculate the dissipated power on the chip for a nominal application. VCC = 5 V VF = 1.5 V VSET = 0.7 V IMOD = 60 mA ICC = 18 mA so: Pd = 5 * 18 + (5 - 1.5 - 0.7) * 60 Pd = 258 mW This number can be entered into Equation 3 along with the environmental information to calculate the nominal operating junction temperature. Because of the open loop feedback control in the bias control circuitry, the revised IMOD value must be determined given the tracking rate chosen so that the power dissipation can be re-calculated. For assessing product reliability, worst case values should be entered to calculate the maximum junction temperature. Reliability of Plastic Packages Although today’s plastic packages are as reliable as ceramic packages under most environmental conditions, as the junction temperature increases a failure mode unique to plastic packages becomes a significant factor in the long term reliability of the device. Modern plastic package assembly utilizes gold wire bonded to aluminum bonding pads throughout the electronics industry. As the temperature of the silicon (junction temperature) increases, an intermetallic compound forms between the gold and aluminum interface. This intermetallic formation results in a significant increase in the impedance of the wire bond and can lead to performance failure of the affected pin. With this relationship between intermetallic formation and junction temperature established, it is incumbent on the designer to ensure that the junction temperature for which a device will operate is consistent with the long term reliability goals of the system. Reliability studies were performed at elevated ambient temperatures (125 °C) from which an Arrhenius Equation, relating junction temperature to bond failure, was established. The application of this equation yields the table of Table 6. This table relates the junction temperature of a device in a plastic package to the continuous operating time before 0.1% bond failure (1 failure per 1000 bonds) The MC10SX1130 device is designed with chip power levels that permit acceptable reliability levels, in most systems, under the conventional 500 lfpm (2.5 m/s) airflow. T = 6.376 × 10 −9 e 11554.267 273.15 + TJ Where: T = Time to 0.1% bond failure Table 6. TJ vs Time to 0.1% Bond Failure Junction Temp. (°C) Time (Hrs.) Time (yrs.) 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.1 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 ORDERING INFORMATION Device Package Shipping† MC10SX1130D SOIC−16 48 Units / Rail MC10SX1130DG SOIC−16 (Pb−Free) 48 Units / Rail MC10SX1130DR2 SOIC−16 2500 / Tape & Reel MC10SX1130DR2G SOIC−16 (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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