MJW3281A_06 datasheet(1/6 Pages) ONSEMI

Il numero della parte	MJW3281A

Spiegazioni elettronici	15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS

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January, 2006 − Rev. 3

1

Publication Order Number:

MJW3281A/D

MJW3281A (NPN)

MJW1302A (PNP)

Preferred Devices

Complementary NPN−PNP

Silicon Power Bipolar

Transistors

The MJW3281A and MJW1302A are PowerBase

t power

transistors for high power audio, disk head positioners and other linear

applications.

Features

• Designed for 100 W Audio Frequency

• Gain Complementary:

Gain Linearity from 100 mA to 7 A

hFE = 45 (Min) @ IC = 8 A

• Low Harmonic Distortion

• High Safe Operation Area − 1 A/100 V @ 1 Second

• High fT − 30 MHz Typical

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

230

Vdc

Collector−Base Voltage

VCBO

230

Vdc

Emitter−Base Voltage

VEBO

5.0

Vdc

Collector−Emitter Voltage − 1.5 V

VCEX

230

Vdc

Collector Current

− Continuous

Collector Current

− Peak (Note 1)

IC

15

25

Adc

Base Current − Continuous

IB

1.5

Adc

Total Power Dissipation @ TC = 25°C

Derate Above 25

°C

PD

200

1.43

W

W/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

− 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

RqJC

0.625

°C/W

Thermal Resistance, Junction−to−Ambient

RqJA

40

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJW3281A

TO−247

CASE 340L

30 Units/Rail

2

1

15 AMPERES

COMPLEMENTARY

SILICON POWER TRANSISTORS

230 VOLTS 200 WATTS

3

MARKING DIAGRAM

MJWxxxxA

AYWWG

xxxx

= 3281 or 1302

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

Preferred devices are recommended choices for future use

and best overall value.

MJW1302A

TO−247

30 Units/Rail

1 BASE

2 COLLECTOR

3 EMITTER

http://onsemi.com

MJW1302AG

TO−247

(Pb−Free)

30 Units/Rail

MJW3281AG

TO−247

(Pb−Free)

30 Units/Rail

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