BDW46G datasheet(5/7 Pages) ONSEMI

Il numero della parte	BDW46G

Spiegazioni elettronici	Darlington Complementary Silicon Power Transistors

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Produttore elettronici	ONSEMI [ON Semiconductor]

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BDW42 − NPN, BDW46, BDW47 − PNP

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5

0.1

Figure 9. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7

1.0

2.0

10

500

300

TJ = 150°C

25

°C

−55

°C

VCE = 3.0 V

200

7.0

BDW42 (NPN)

BDW46, 47 (PNP)

20,000

5000

10,000

3000

2000

1000

3.0

5.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7

1.0

2.0

10

500

300

TJ = 150°C

25

°C

−55

°C

VCE = 3.0 V

200

7.0

20,000

5000

10,000

3000

2000

1000

3.0

5.0

7000

700

Figure 10. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0 3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0

3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

Figure 11. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.1

0.2 0.3

0.5 0.7

1.0

2.0

10

7.0

3.0

5.0

0.1

0.2 0.3

0.5 0.7 1.0

2.0

10

7.0

3.0

5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5

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