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J112G Scheda tecnica(PDF) 1 Page - ON Semiconductor

Il numero della parte J112G
Spiegazioni elettronici  JFET Chopper Transistors N?묬hannel - Depletion
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© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
1
Publication Order Number:
J111/D
J111, J112
JFET Chopper Transistors
N−Channel — Depletion
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain −Gate Voltage
VDG
−35
Vdc
Gate −Source Voltage
VGS
−35
Vdc
Gate Current
IG
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above = 25
°C
PD
350
2.8
mW
mW/
°C
Lead Temperature
TL
300
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
http://onsemi.com
TO−92
CASE 29−11
STYLE 5
1
2
3
J11x
AYWW
G
G
1 DRAIN
2 SOURCE
3
GATE
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
J11x
= Device Code
x = 1 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)


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