EMA6DXV5T1 datasheet(2/4 Pages) ONSEMI

Il numero della parte	EMA6DXV5T1

Spiegazioni elettronici	Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

−

0.2

mAdc

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

hFE

160

350

−

Collector−Emitter Saturation Voltage

(IC = 10 mA, IB = 1.0 mA)

VCE(sat)

−

0.25

Vdc

Output Voltage (on)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)

VOL

−

0.2

Vdc

Output Voltage (off)

(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

Input Resistor

R1

32.9

47

61.1

k

W

3. Pulse Test: Pulse Width < 300

ms, Duty Cycle < 2.0%

Figure 1. Derating Curve

350

200

150

100

50

0

−50

0

50

100

150

TA, AMBIENT TEMPERATURE (5°C)

RqJA= 370°C/W

250

300

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