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EMA6DXV5T1 Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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EMA6DXV5T1 Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 4 page EMA6DXV5T1, EMA6DXV5T5 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − 0.2 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 160 350 − Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) VOH 4.9 − − Vdc Input Resistor R1 32.9 47 61.1 k W 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Figure 1. Derating Curve 350 200 150 100 50 0 −50 0 50 100 150 TA, AMBIENT TEMPERATURE (5°C) RqJA= 370°C/W 250 300 |
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