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74VCXH245MNR2G Scheda tecnica(PDF) 5 Page - ON Semiconductor |
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74VCXH245MNR2G Scheda tecnica(HTML) 5 Page - ON Semiconductor |
5 / 8 page 74VCXH245 http://onsemi.com 5 AC CHARACTERISTICS (Note 7; tR = tF = 2.0 ns; CL = 30 pF; RL = 500 W) Limits TA = −40°C to +85°C VCC = 3.0 V to 3.6 V VCC = 2.3 V to 2.7 V VCC = 1.65 V to1.95 V Symbol Parameter Waveform Min Max Min Max Min Max Unit tPLH tPHL Propagation Delay Input to Output 1 0.6 0.6 3.5 3.5 0.8 0.8 4.2 4.2 1.5 1.5 8.4 8.4 ns tPZH tPZL Output Enable Time to High and Low Level 2 0.6 0.6 4.5 4.5 0.8 0.8 5.6 5.6 1.5 1.5 9.8 9.8 ns tPHZ tPLZ Output Disable Time From High and Low Level 2 0.6 0.6 3.6 3.6 0.8 0.8 4.0 4.0 1.5 1.5 7.2 7.2 ns tOSHL tOSLH Output−to−Output Skew (Note 8) 0.5 0.5 0.5 0.5 0.75 0.75 ns 7. For CL = 50 pF, add approximately 300 ps to the AC maximum specification. 8. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol Characteristic Condition Typ Unit VOLP Dynamic LOW Peak Voltage (N ) VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V 0.3 V (Note 9) VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V 0.7 VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V 1.0 VOLV Dynamic LOW Valley Voltage (N ) VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V −0.3 V (Note 9) VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V −0.7 VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V −1.0 VOHV Dynamic HIGH Valley Voltage (N ) VCC = 1.8 V, CL = 30 pF, VIH = VCC, VIL = 0 V 1.3 V (Note 10) VCC = 2.5 V, CL = 30 pF, VIH = VCC, VIL = 0 V 1.7 VCC = 3.3 V, CL = 30 pF, VIH = VCC, VIL = 0 V 2.0 9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. 10. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the HIGH state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance Note 11 6 pF COUT Output Capacitance Note 11 7 pF CPD Power Dissipation Capacitance Note 11, 10 MHz 20 pF 11. VCC = 1.8, 2.5 or 3.3 V; VI = 0 V or VCC. |
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