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STK850_0610 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STK850_0610 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STK850 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 15A VGS= 4.5V, ID= 15A 0.0024 0.0029 0.0029 0.0035 Ω Ω Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =10V, ID = 15A 48 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 3150 940 90 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID = 30A VGS =4.5V (see Figure 14) 24.5 8 8.2 32.5 nC nC nC |
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