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BC141-16 Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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BC141-16 Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 35 200 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 60 V VCE = 60 V TC = 150 oC 100 100 nA µA V(BR)CBO ∗ Collector-Base Breakdown Voltage (IE = 0) IC = 100 µA 100 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 30 mA 60 V V(BR)EBO ∗ Emitter-Base Breakdown Voltage (IC = 0) IE = 100 µA 7V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 100 mA IB = 10 mA IC = 500 mA IB = 50 mA IC = 1 A IB = 100 mA 0.1 0.35 0.6 1 V V V VBE(on) ∗ Base-Emitter On Voltage IC = 1 A VCE = 1 V 1.25 1.8 V hFE ∗ DC Current Gain IC = 100 µA VCE = 1 V IC = 100 mA VCE = 1 V IC = 1 A VCE = 1 V 100 90 160 30 250 fT Transition Frequency IC = 50 mA VCE = 10 V 50 MHz CCBO Collector-Base Capacitance IE = 0 VCB = 5 V f = 1MHz 12 25 pF ton Turn-on Time IC = 100 mA IB1 = 5 mA 250 ns toff Turn-off Time IC = 100 mA IB1 = IB2 = 5 mA 850 ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 % BC141-16 2/5 |
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