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BU2725 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BU2725 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2725AF Fig.1. Test circuit for V CEOsust. Fig.2. Oscilloscope display for V CEOsust. Fig.3. Switching times waveforms (16 kHz). Fig.4. Switching times definitions. Fig.5. Switching times test circuit. Fig.6. DC current gain. h FE = f (IC) Parameter T hs (Low and high gain) + 50v 100-200R Horizontal Vertical Oscilloscope 1R 6V 30-60 Hz 100R ICsat 90 % 10 % tf ts IBend IC IB t t - IBM VCE / V min VCEOsust IC / mA 100 200 250 0 + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE BU2727A/AF 0.01 0.1 1 10 100 1 10 100 hFE IC / A VCE = 5 V Ths = 25 C Ths = 85 C September 1997 3 Rev 1.300 |
Codice articolo simile - BU2725 |
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Descrizione simile - BU2725 |
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