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BU2720AF Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BU2720AF Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2720AF THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink without heatsink compound - 3.7 K/W R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 22 - pF heatsink STATIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - - 1.0 mA BV EBO Emitter-base breakdown voltage I B = 1 mA 7.5 13.5 - V V CEOsust Collector-emitter sustaining voltage I B = 0 A; IC = 100 mA; 825 900 - V L = 25 mH V CEsat Collector-emitter saturation voltage I C = 5.5 A; IB = 1.38 A - - 1.0 V V BEsat Base-emitter saturation voltage I C = 5.5 A; IB = 1.38 A - - 1.0 V h FE DC current gain I C = 100 mA; VCE = 5 V - 22 - h FE I C = 5.5 A; VCE = 1 V 4 5.5 7.5 DYNAMIC CHARACTERISTICS T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (16 kHz line I Csat = 5.5 A; LC = 750 µH; deflection circuit) C fb = 15.5 nF; VCC = 125 V; I B(end) = 1.2 A; LB = 6 µH; -VBB = 4 V; -I BM = ICM/2; t s Turn-off storage time 7.4 8.5 µs t f Turn-off fall time 0.7 0.9 µs 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.300 |
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