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BU2532AW Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte BU2532AW
Spiegazioni elettronici  Silicon Diffused Power Transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2532AW Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.8. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Tmb)
Fig.9. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
Fig.10. Test Circuit RBSOA. V
CC = 150 V;
-V
BB = 1 - 5 V;
L
C = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
C
FB = 1 - 10 nF; IB(end) = 1.0 - 2.0 A
Fig.11. Reverse bias safe operating area. T
j ≤ Tjmax
0
1234
0.6
0.7
0.8
0.9
1
VBEsat / V
BU2530/2AL
IC = 9 A
IC = 7 A
IB / A
Tj = 85 C
Tj = 25 C
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
BU2530/32AL
100
1000
1500
0
10
20
30
40
IC / A
VCE / V
Area where
fails occur
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
BU2525A
D = 0
0.02
0.05
0.1
0.2
0.5
10
1
0.1
0.01
0.001
D =
tp
tp
T
T
P
t
D
September 1997
4
Rev 1.000


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