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BU2532AW Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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BU2532AW Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Initial specification Silicon Diffused Power Transistor BU2532AW Fig.7. Typical base-emitter saturation voltage. V BEsat = f (IB); parameter IC Fig.8. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) Fig.9. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T Fig.10. Test Circuit RBSOA. V CC = 150 V; -V BB = 1 - 5 V; L C = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH; C FB = 1 - 10 nF; IB(end) = 1.0 - 2.0 A Fig.11. Reverse bias safe operating area. T j ≤ Tjmax 0 1234 0.6 0.7 0.8 0.9 1 VBEsat / V BU2530/2AL IC = 9 A IC = 7 A IB / A Tj = 85 C Tj = 25 C LB IBend -VBB LC T.U.T. VCC VCL CFB 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 BU2530/32AL 100 1000 1500 0 10 20 30 40 IC / A VCE / V Area where fails occur 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) BU2525A D = 0 0.02 0.05 0.1 0.2 0.5 10 1 0.1 0.01 0.001 D = tp tp T T P t D September 1997 4 Rev 1.000 |
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