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IRF7210PBF Datasheet(Scheda tecnica) 1 Page - International Rectifier

Numero della parte IRF7210PBF
Dettagli  HEXFET Power MOSFET
Download  7 Pages
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Produttore  IRF [International Rectifier]
Homepage  http://www.irf.com
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 1 page
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Parameter
Max.
Units
VDS
Drain- Source Voltage
-12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
±16
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
±12
A
IDM
Pulsed Drain Current

±100
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 12
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10µs
16
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
08/19/05
IRF7210PbF
HEXFET® Power MOSFET
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
50
°C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
VDSS = -12V
RDS(on) = 0.007Ω
Description
Absolute Maximum Ratings
W
www.irf.com
1
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
PD - 97040




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