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BU2520D Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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BU2520D Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520D Fig.9. Typical turn-off losses. T j = 85˚C Eoff = f (I B); parameter IC; parameter frequency Fig.10. Typical collector storage and fall time. ts = f (I B); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz Fig.11. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C = f (Tmb) Fig.12. Transient thermal impedance. Z th j-mb = f(t); parameter D = tp/T Fig.13. Forward bias safe operating area. T mb = 25 ˚C I CDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. 0.1 1 10 IB / A Eoff / uJ 1000 100 10 IC = 6 A 5 A 1E-06 1E-04 1E-02 1E+00 t / s Zth / (K/W) 10 1 0.1 0.01 0.001 D = tp tp T T P t D D = 0 0.02 0.05 0.1 0.2 0.5 BU2520A IC / A 100 10 1 0.1 0.01 1 10 100 1000 VCE / V ICM ICDC Ptot 100 us 1 ms 10 ms DC 30 us tp = = 0.01 0.1 1 10 IB / A ts, tf / us 12 11 10 9 8 7 6 5 4 3 2 1 0 ts tf IC = 6 A 5 A 0 20 40 60 80 100 120 140 Tmb / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 November 1995 4 Rev 1.200 |
Codice articolo simile - BU2520D |
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Descrizione simile - BU2520D |
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