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BU2507AF Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BU2507AF Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507AF Fig.1. Switching times waveforms. Fig.2. Switching times definitions. Fig.3. Switching times test circuit. Fig.4. High and low DC current gain. h FE = f (IC) V CE = 1 V Fig.5. High and low DC current gain. h FE = f (IC) V CE = 5 V Fig.6. Typical collector-emitter saturation voltage. V CEsat = f (IC); parameter IC/IB IC IB VCE ICsat IBend 64us 26us 20us t t t TRANSISTOR DIODE 0.01 0.1 1 10 100 1 10 100 IC / A hFE VCE = 1 V Ths = 25 C Ths = 85 C BU2507AF/X ICsat 90 % 10 % tf ts IBend IC IB t t - IBM BU2507AF/X 0.01 0.1 1 10 100 1 10 100 IC / A hFE VCE = 5 V Ths = 25 C Ths = 85 C + 150 v nominal adjust for ICsat Lc Cfb T.U.T. LB IBend -VBB 0.1 110 100 0.01 0.1 1 10 Ths = 25 C Ths = 85 C BU2507AF/X IC / A VCEsat / V IC/IB = 3 IC/IB = 4 IC/IB = 5 September 1997 3 Rev 1.100 |
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