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BLS2933-100 Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte BLS2933-100
Spiegazioni elettronici  Microwave power LDMOS transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BLS2933-100 Scheda tecnica(HTML) 4 Page - NXP Semiconductors

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BLS2933-100_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 1 August 2006
4 of 12
Philips Semiconductors
BLS2933-100
Microwave power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLS2933-100 is capable of withstanding a load mismatch corresponding to
VSWR > 10 : 1 through all phases under the following conditions: VDS =32V;
IDq = 20 mA; PL = 100 W pulsed, tp = 200 µs; δ =12%.
Table 8.
Typical impedance
f
ZS
ZL
GHz
2.9
3.3
− j5.6
3.5
− j3.3
3.0
3.7
− j5.3
3.1
− j3.6
3.1
5.9
− j5.8
3.3
− j3.3
3.2
6.8
− j3.4
3.2
− j3.5
3.3
6.6
− j2.7
3.1
− j3.6
Fig 1.
Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate


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