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BLS2933-100 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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BLS2933-100 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 12 page BLS2933-100_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 1 August 2006 4 of 12 Philips Semiconductors BLS2933-100 Microwave power LDMOS transistor 7.1 Ruggedness in class-AB operation The BLS2933-100 is capable of withstanding a load mismatch corresponding to VSWR > 10 : 1 through all phases under the following conditions: VDS =32V; IDq = 20 mA; PL = 100 W pulsed, tp = 200 µs; δ =12%. Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.9 3.3 − j5.6 3.5 − j3.3 3.0 3.7 − j5.3 3.1 − j3.6 3.1 5.9 − j5.8 3.3 − j3.3 3.2 6.8 − j3.4 3.2 − j3.5 3.3 6.6 − j2.7 3.1 − j3.6 Fig 1. Definition of transistor impedance 001aaf059 drain ZL ZS gate |
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