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NUP1301ML3T1 Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte NUP1301ML3T1
Spiegazioni elettronici  Low Capacitance Diode Array for ESD Protection in a Single Data Line
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Produttore elettronici  ONSEMI [ON Semiconductor]
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NUP1301ML3T1 Scheda tecnica(HTML) 2 Page - ON Semiconductor

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NUP1301ML3T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
RqJA
625
°C/W
Lead Solder Temperature
Maximum 10 Seconds Duration
TL
260
°C
Junction Temperature
TJ
−65 to 150
°C
Storage Temperature
Tstg
−65 to +150
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 mA)
V(BR)
70
Vdc
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
2.5
30
50
mAdc
Diode Capacitance (between I/O and ground)
(VR = 0, f = 1.0 MHz)
CD
0.9
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mVdc
2. FR−5 = 1.0
 0.75  0.062 in.
3. Alumina = 0.4
 0.3  0.024 in, 99.5% alumina.


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