NCP1027 datasheet(4/30 Pages) ONSEMI

Il numero della parte	NCP1027

Spiegazioni elettronici	High?뭋oltage Switcher for Medium Power Offline SMPS Featuring Low Standby Power

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Produttore elettronici	ONSEMI [ON Semiconductor]

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NCP1027

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Power Supply Voltage on all Pins, Except Pin 5 (Drain)

VCC

−0.3 to 10

V

Drain Voltage

BVdss

−0.3 to 700

V

Maximum Current into Pin 1 when Activating the 8.7 V Active Clamp

I_VCC

15

mA

Thermal Resistance, Junction−to−Air – PDIP7

RqJA

100

°C/W

Thermal Resistance, Junction−to−Air – PDIP7 with 1.0 cm

@ of 35 m Copper Area

RqJA

75

°C/W

Maximum Junction Temperature

TJMAX

150

°C

Storage Temperature Range

−

−60 to +150

°C

ESD Capability, Human Body Model (HBM) (All Pins Except HV)

−

2.0

kV

ESD Capability, Machine Model (MM)

−

200

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device series contains ESD protection and exceeds the following tests:

Human Body Model 2000 V per Mil−Std−883, Method 3015.

Machine Model Method 200 V.

2. This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.

ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = 0°C to +125°C, Max TJ = 150°C,

VCC = 8.0 V, unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

SUPPLY SECTION AND VCC MANAGEMENT

VCC Increasing Level at which the Switcher Starts to Operate

1

VCCON

7.9

8.5

8.9

V

VCC Decreasing Level at which the Switcher Stops Operation

1

VCC(min)

6.7

7.2

7.9

V

Hysteresis between VCCON and VCC(min)

−

VCChyste

−

1.2

−

V

Offset Voltage above VCCON at which the Internal Clamp Activates

1

VCCclamp

140

200

300

mV

VCC Voltage at which the Internal Latch is Reset

1

VCCreset

−

4.0

−

V

Internal IC Consumption, MOSFET Switching at

65 kHz or 100 kHz

1

ICC1

−

1.4

1.9

mA

POWER SWITCH CIRCUIT

Power Switch Circuit On−State Resistance

NCP1027 (Id = 100 mA)

TJ = 25°C

TJ = 125°C

5

RDS(on)

−

5.8

9.8

7.0

11

W

Power Switch Circuit and Startup Breakdown Voltage

(ID(off) = 120 mA, TJ = 25°C)

5

BVdss

700

−

V

Power Switch and Startup Breakdown Voltage Off−State

Leakage Current

TJ = 25°C (Vds = 700 V)

TJ = 125°C (Vds = 700 V)

5

Idss(OFF)

−

50

30

−

mA

Switching Characteristics (RL = 50

W, Vds Set for

Idrain = 0.7 x Ilim)

Turn−on Time (90%−10%)

Turn−off Time (10%−90%)

5

ton

toff

−

35

−

ns

INTERNAL STARTUP CURRENT SOURCE

High−Voltage Current Source, VCC = VCCON – 200 mV

1

IC1

3.5

6.0

8.0

mA

High−Voltage Current Source, VCC = 0

1

IC2

350

650

900

mA

VCC Transition Level for IC1 to IC2 Toggling Point

1

VCCTh

−

1.3

−

V

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