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SPW17N80C2 Scheda tecnica(PDF) 1 Page - Infineon Technologies AG |
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SPW17N80C2 Scheda tecnica(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page 2000-05-29 Page 1 SPW17N80C2 Preliminary data Cool MOS™ Power Transistor C Power Semiconductors O O LMOS Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 247 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances Product Summary VDS 800 V RDS(on) 290 m W ID 17 A P-TO247 Type Package Ordering Code SPW17N80C2 P-TO247 Q67040-S4359 Marking SPW17N80C2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC = 25 °C TC = 100 °C ID 17 11 A Pulsed drain current, tp limited by Tjmax ID puls 51 Avalanche energy, single pulse ID=4A, VDD=50V EAS 670 mJ Avalanche energy, repetitive tAR limited by Tjmax1) ID=17A, VDD=50V EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 17 A Reverse diode d v/dt IS=17A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C d v/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation TC = 25 °C Ptot 208 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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