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BDW94C Scheda tecnica(PDF) 2 Page - Bourns Electronic Solutions |
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BDW94C Scheda tecnica(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS 2 PRODU CT INFORMA TION SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC = -100 mA IB = 0 (see Note 3) BDW94 BDW94A BDW94B BDW94C -45 -60 -80 -100 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -60 V VCB = -80 V VCB = -80 V IB =0 IB =0 IB =0 IB =0 BDW94 BDW94A BDW94B BDW94C -1 -1 -1 -1 mA ICBO Collector cut-off current VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V VCB = -45 V VCB = -60 V VCB = -80 V VCB = -100 V IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 IE =0 TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW94 BDW94A BDW94B BDW94C BDW94 BDW94A BDW94B BDW94C -0.1 -0.1 -0.1 -0.1 -5 -5 -5 -5 mA IEBO Emitter cut-off current VEB = -5 V IC =0 -2 mA hFE Forward current transfer ratio VCE = -3 V VCE = -3 V VCE = -3 V IC = -3 A IC = -10 A IC = -5 A (see Notes 3 and 4) 1000 100 750 20000 VCE(sat) Collector-emitter saturation voltage IB = -20 mA IB = -100 mA IC = -5 A IC = -10 A (see Notes 3 and 4) -2 -3 V VBE(sat) Base-emitter saturation voltage IB = -20 mA IB = -100 mA IC = -5 A IC = -10 A (see Notes 3 and 4) -2.5 -4 V VEC Parallel diode forward voltage IE = -5 A IE = -10 A IB = 0 IB = 0 -2 -4 V thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W |
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