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BC516 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BC516 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 23 3 Philips Semiconductors Product specification PNP Darlington transistor BC516 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V −− −100 nA IEBO emitter cut-off current IC = 0; VEB = −10 V −− −100 nA hFE DC current gain IC = −20 mA; VCE = −2 V; see Fig.2 30000 −− VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA −− −1V VBEsat base-emitter saturation voltage IC = −100 mA; IB = −0.1 mA −− −1.5 V VBEon base-emitter on-state voltage IC = −10 mA; VCE = −5V −− −1.4 V fT transition frequency IC = −30 mA; VCE = −5 V; f = 100 MHz − 220 − MHz handbook, full pagewidth 0 100000 20000 40000 60000 80000 hFE MGD836 −1 −10 IC (mA) −102 −103 Fig.2 DC current gain; typical values. VCE = −2V. |
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