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BC516 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BC516
Spiegazioni elettronici  PNP Darlington transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC516 Scheda tecnica(HTML) 3 Page - NXP Semiconductors

  BC516 Datasheet HTML 1Page - NXP Semiconductors BC516 Datasheet HTML 2Page - NXP Semiconductors BC516 Datasheet HTML 3Page - NXP Semiconductors BC516 Datasheet HTML 4Page - NXP Semiconductors BC516 Datasheet HTML 5Page - NXP Semiconductors BC516 Datasheet HTML 6Page - NXP Semiconductors BC516 Datasheet HTML 7Page - NXP Semiconductors BC516 Datasheet HTML 8Page - NXP Semiconductors  
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1999 Apr 23
3
Philips Semiconductors
Product specification
PNP Darlington transistor
BC516
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −30 V
−−
−100 nA
IEBO
emitter cut-off current
IC = 0; VEB = −10 V
−−
−100 nA
hFE
DC current gain
IC = −20 mA; VCE = −2 V; see Fig.2
30000
−−
VCEsat
collector-emitter saturation voltage IC = −100 mA; IB = −0.1 mA
−−
−1V
VBEsat
base-emitter saturation voltage
IC = −100 mA; IB = −0.1 mA
−−
−1.5
V
VBEon
base-emitter on-state voltage
IC = −10 mA; VCE = −5V
−−
−1.4
V
fT
transition frequency
IC = −30 mA; VCE = −5 V; f = 100 MHz −
220
MHz
handbook, full pagewidth
0
100000
20000
40000
60000
80000
hFE
MGD836
−1
−10
IC (mA)
−102
−103
Fig.2 DC current gain; typical values.
VCE = −2V.


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