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BC141-16 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BC141-16 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 May 12 3 Philips Semiconductors Product specification NPN medium power transistors BC140; BC141 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC140 − 80 V BC141 − 100 V VCEO collector-emitter voltage open base BC140 − 40 V BC141 − 60 V VEBO emitter-base voltage open collector − 7V IC collector current (DC) − 1A ICM peak collector current − 1.5 A IBM peak base current − 200 mA Ptot total power dissipation Tcase ≤ 45 °C − 3.7 W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air 200 K/W Rth j-c thermal resistance from junction to case 35 K/W |
Codice articolo simile - BC141-16 |
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Descrizione simile - BC141-16 |
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