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BC177B Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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BC177B Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 Jun 04 4 Philips Semiconductors Product specification PNP general purpose transistor BC177 CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. VBE decreases by about −2 mV/K with increasing temperature. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −20 V −−1 −15 nA IE = 0; VCB = −20 V; Tj = 150 °C −−−10 µA IEBO emitter cut-off current IC = 0; VEB = −5V −− 50 nA hFE DC current gain IC = −2 mA; VCE = −5 V 125 140 500 hFE DC current gain IC = −2 mA; VCE = −5V BC177A 125 180 260 BC177B 240 290 500 VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−75 −300 mV IC = −100 mA; IB = −5mA −−250 − mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−700 − mV IC = −100 mA; IB = −5mA −−850 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V; note 1 −600 −650 −750 mV Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz − 46pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 −− MHz F noise figure IC = −200 µA; VCE = −5 V; RS =2kΩ; f = 1 kHz; B = 200 Hz −− 10 dB |
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