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BC177B Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BC177B Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 Jun 04 2 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to the case Fig.1 Simplified outline (TO-18; SOT18) and symbol. handbook, halfpage MAM263 1 3 2 3 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−45 V ICM peak collector current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C − 300 mW hFE DC current gain IC = −2 mA; VCE = −5 V 125 500 fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − MHz |
Codice articolo simile - BC177B |
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Descrizione simile - BC177B |
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