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BC177A Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte BC177A
Spiegazioni elettronici  PNP general purpose transistor
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC177A Scheda tecnica(HTML) 4 Page - NXP Semiconductors

  BC177A Datasheet HTML 1Page - NXP Semiconductors BC177A Datasheet HTML 2Page - NXP Semiconductors BC177A Datasheet HTML 3Page - NXP Semiconductors BC177A Datasheet HTML 4Page - NXP Semiconductors BC177A Datasheet HTML 5Page - NXP Semiconductors BC177A Datasheet HTML 6Page - NXP Semiconductors BC177A Datasheet HTML 7Page - NXP Semiconductors BC177A Datasheet HTML 8Page - NXP Semiconductors  
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1997 Jun 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
BC177
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. VBE decreases by about −2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−−1
−15
nA
IE = 0; VCB = −20 V; Tj = 150 °C
−−−10
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−
50
nA
hFE
DC current gain
IC = −2 mA; VCE = −5 V
125
140
500
hFE
DC current gain
IC = −2 mA; VCE = −5V
BC177A
125
180
260
BC177B
240
290
500
VCEsat
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA
−−75
−300 mV
IC = −100 mA; IB = −5mA
−−250 −
mV
VBEsat
base-emitter saturation voltage
IC = −10 mA; IB = −0.5 mA
−−700 −
mV
IC = −100 mA; IB = −5mA
−−850 −
mV
VBE
base-emitter voltage
IC = −2 mA; VCE = −5 V; note 1
−600 −650 −750 mV
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
46pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−−
MHz
F
noise figure
IC = −200 µA; VCE = −5 V; RS =2kΩ;
f = 1 kHz; B = 200 Hz
−−
10
dB


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