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BC160-10 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BC160-10 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 May 12 2 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 FEATURES • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose applications. DESCRIPTION PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and BC141. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM334 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BC160 −−−40 V BC161 −−−60 V VCES collector-emitter voltage open base BC160 −−−40 V BC161 −−−60 V ICM peak collector current −−−1.5 A Ptot total power dissipation Tcase ≤ 45 °C −− 3.7 W hFE DC current gain IC = −100 mA; VCE = −1V BC160-10; BC161-10 63 100 160 BC160-16; BC161-16 100 160 250 fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 50 −− MHz |
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