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BC141-10 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BC141-10 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 May 12 2 Philips Semiconductors Product specification NPN medium power transistors BC140; BC141 FEATURES • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM317 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter BC140 −− 80 V BC141 −− 100 V VCEO collector-emitter voltage open base BC140 −− 40 V BC141 −− 60 V ICM peak collector current −− 1.5 A Ptot total power dissipation Tcase ≤ 45 °C −− 3.7 W hFE DC current gain IC = 100 mA; VCE =1V BC140-10; BC141-10 63 100 160 BC140-16; BC141-16 100 160 250 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 −− MHz |
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