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BC160 Scheda tecnica(PDF) 4 Page - NXP Semiconductors

Il numero della parte BC160
Spiegazioni elettronici  PNP medium power transistors
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC160 Scheda tecnica(HTML) 4 Page - NXP Semiconductors

  BC160 Datasheet HTML 1Page - NXP Semiconductors BC160 Datasheet HTML 2Page - NXP Semiconductors BC160 Datasheet HTML 3Page - NXP Semiconductors BC160 Datasheet HTML 4Page - NXP Semiconductors BC160 Datasheet HTML 5Page - NXP Semiconductors BC160 Datasheet HTML 6Page - NXP Semiconductors BC160 Datasheet HTML 7Page - NXP Semiconductors BC160 Datasheet HTML 8Page - NXP Semiconductors  
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1997 May 12
4
Philips Semiconductors
Product specification
PNP medium power transistors
BC160; BC161
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −40 V
−−10
−100
nA
IE = 0; VCB = −40 V; Tj = 150 °C
−−10
−100
µA
IEBO
emitter cut-off current
IC = 0; VEB = −5V
−−−100
nA
hFE
DC current gain
IC = −100 µA; VCE = −1V
BC160-10; BC161-10
80
BC160-16; BC161-16
120
hFE
DC current gain
IC = −100 mA; VCE = −1V
BC160-10; BC161-10
63
100
160
BC160-16; BC161-16
100
160
250
hFE
DC current gain
IC = −1 A; VCE = −1V
BC160-10; BC161-10
20
BC160-16; BC161-16
30
VCEsat
collector-emitter saturation voltage
IC = −1 A; IB = −100 mA
−−0.6
−1V
VBE
base-emitter voltage
IC = −1 A; VCE = −1V
−−1
−1.7
V
Cc
collector capacitance
IE =ie = 0; VCB = −10 V; f = 1 MHz
−−
30
pF
Ce
emitter capacitance
IC =ic = 0; VEB = −0.5 V; f = 1 MHz
−−
180
pF
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
50
−−
MHz
Switching times (between 10% and 90% levels)
ton
turn-on time
ICon = −100 mA; IBon = −5 mA;
IBoff =5mA
−−
500
ns
toff
turn-off time
−−
650
ns


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