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BC160 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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BC160 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1997 May 12 4 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −40 V −−10 −100 nA IE = 0; VCB = −40 V; Tj = 150 °C −−10 −100 µA IEBO emitter cut-off current IC = 0; VEB = −5V −−−100 nA hFE DC current gain IC = −100 µA; VCE = −1V BC160-10; BC161-10 − 80 − BC160-16; BC161-16 − 120 − hFE DC current gain IC = −100 mA; VCE = −1V BC160-10; BC161-10 63 100 160 BC160-16; BC161-16 100 160 250 hFE DC current gain IC = −1 A; VCE = −1V BC160-10; BC161-10 − 20 − BC160-16; BC161-16 − 30 − VCEsat collector-emitter saturation voltage IC = −1 A; IB = −100 mA −−0.6 −1V VBE base-emitter voltage IC = −1 A; VCE = −1V −−1 −1.7 V Cc collector capacitance IE =ie = 0; VCB = −10 V; f = 1 MHz −− 30 pF Ce emitter capacitance IC =ic = 0; VEB = −0.5 V; f = 1 MHz −− 180 pF fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 50 −− MHz Switching times (between 10% and 90% levels) ton turn-on time ICon = −100 mA; IBon = −5 mA; IBoff =5mA −− 500 ns toff turn-off time −− 650 ns |
Codice articolo simile - BC160 |
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Descrizione simile - BC160 |
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