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74HCT74BQ Scheda tecnica(PDF) 7 Page - NXP Semiconductors

Il numero della parte 74HCT74BQ
Spiegazioni elettronici  Dual D-type flip-flop with set and reset; positive-edge trigger
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HCT74BQ Scheda tecnica(HTML) 7 Page - NXP Semiconductors

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2003 Jul 10
7
Philips Semiconductors
Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
74HC74; 74HCT74
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70
°C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60
°C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C derate linearly with 4.5 mW/K.
For DIP14 packages: above 70
°C derate linearly with 12 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC74
74HCT74
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
VCC
0
VCC
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
−40
+25
+125
−40
+25
+125
°C
tr,tf
input rise and fall
times
VCC = 2.0 V
−−
1000
−−
500
ns
VCC = 4.5 V
6.0
500
6.0
500
ns
VCC = 6.0 V
−−
400
−−
500
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+7.0
V
IIK
input diode current
VI < −0.5 V or VI >VCC + 0.5 V;
note 1
−±20
mA
IOK
output diode current
VO < −0.5 V or VO >VCC + 0.5 V;
note 1
−±20
mA
IO
output source or sink current
−0.5V<VO <VCC + 0.5 V; note 1 −±25
mA
ICC, IGND
VCC or GND current
−±100
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation
Tamb = −40 to +125 °C; note 2
500
mW


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