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CD1408-R1600 Scheda tecnica(PDF) 1 Page - Bourns Electronic Solutions |
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CD1408-R1600 Scheda tecnica(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page CD1408-R1200~R11000 – Surface Mount Rectifier Diode *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Features ■ Lead free device (RoHS compliant*) ■ Low profile ■ Low power loss, high efficiency ■ UL 94V-0 classification Applications ■ High frequency switching power supplies ■ Inverters ■ Free wheeling ■ Polarity protection General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Rectifier Diodes for rectification applications, in compact chip package 1408 size format (compatible with SOD87, SOD123 formats), which offers PCB real estate savings and are considerably smaller than most competitive parts. The Glass Passivated Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 200 V up to 1000 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away. Tin Plated Connectors FRP Substrate and Epoxy Underfill Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CD1408- Unit R1200 R1400 R1600 R1800 R11000 Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 1000 V Maximum RMS Voltage VRMS 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 200 400 600 800 1000 V Max. Average Forward Rectified Current1 I(AV) 1.0 A DC Reverse Current @ Rated DC Blocking Voltage (@Ta = 25 °C) IR 1.0 µA DC Reverse Current @ Rated DC Blocking Voltage (@Ta = 125 °C) IR 30.0 µA DC Reverse Current @ Rated DC Blocking Voltage (@Ta = 150 °C) IR 50.0 µA Typical Junction Capacitance2 CJ 12 pF Instantaneous Forward Voltage @ IF = 1 A VF 1.0 V Maximum Reverse Recovery Time3 Trr 3000 ns Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30.0 A Notes: 1 See Forward Derating Curve. 2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC. 3 Reverse recovery test condition: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Parameter Symbol CD1408-R1200~R11000 Unit Operating Temperature Range TJ -65 to +175 °C Storage Temperature Range TSTG -65 to +175 °C |
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