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FQA24N50F Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FQA24N50F Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2001 Fairchild Semiconductor Corporation September 2001 Rev. A2, September 2001 FRFETTM FQA24N50F 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology. Features • 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V • Low gate charge ( typical 90 nC) • Low Crss ( typical 55 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode ( max, 250ns ) Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQA24N50F Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 24 A - Continuous (TC = 100°C) 15.2 A IDM Drain Current - Pulsed (Note 1) 96 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 24 A EAR Repetitive Avalanche Energy (Note 1) 29 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns PD Power Dissipation (TC = 25°C) 290 W - Derate above 25°C 2.33 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.43 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-3P FQA Series G S D |
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