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FQA24N50F Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FQA24N50F
Spiegazioni elettronici  500V N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA24N50F Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
September 2001
Rev. A2, September 2001
FRFETTM
FQA24N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
Features
• 24A, 500V, RDS(on) = 0.2Ω @VGS = 10 V
• Low gate charge ( typical 90 nC)
• Low Crss ( typical 55 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQA24N50F
Units
VDSS
Drain-Source Voltage
500
V
ID
Drain Current
- Continuous (TC = 25°C)
24
A
- Continuous (TC = 100°C)
15.2
A
IDM
Drain Current
- Pulsed
(Note 1)
96
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
1100
mJ
IAR
Avalanche Current
(Note 1)
24
A
EAR
Repetitive Avalanche Energy
(Note 1)
29
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
15
V/ns
PD
Power Dissipation (TC = 25°C)
290
W
- Derate above 25°C
2.33
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.43
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.24
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
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D
G
TO-3P
FQA Series
G
S
D


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