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74HC03N Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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74HC03N Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page December 1990 4 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC/HCT03 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Voltages are referenced to GND (ground = 0 V) SYMBOL PARAMETER MIN. MAX. UNIT CONDITIONS VCC DC supply voltage −0.5 +7 V VO DC output voltage −0.5 +7 V IIK DC input diode current 20 mA for VI <−0.5 V or VI > VCC + 0.5 V −IOK DC output diode current 20 mA for VO <−0.5 V −I O DC output sink current 25 mA for − 0.5 V < VO ±ICC; ±IGND DC VCC or GND current 50 mA Tstg storage temperature range −65 +150 °C Ptot power dissipation per package for temperature range; −40 to +125 °C 74HC/HCT plastic DIL 750 mW above +70 °C: derate linearly with 12 mW/K plastic mini-pack (SO) 500 mW above +70 °C: derate linearly with 8 mW/K |
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