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STP185N55 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STP185N55
Spiegazioni elettronici  N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP185N55 Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB185N55 - STP185N55
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
55
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,@125°C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
200
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
2
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 60A
D²PAK
TO-220
3.5
3.8
m
Ω
m
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
VDS = 15V , ID =60A
Tbd
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
6200
1800
100
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 27V, ID = 60A
RG =4.7Ω VGS = 10V
(see Figure 1)
Tbd
Tbd
Tbd
Tbd
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44V, ID = 120A,
VGS = 10V, RG =4.7Ω
(see Figure 2)
110
Tbd
Tbd
Tbd
nC
nC
nC


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