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74AHCT541PW Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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74AHCT541PW Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 16 page 1999 Nov 24 2 Philips Semiconductors Product specification Octal buffer/line driver; 3-state 74AHC541; 74AHCT541 FEATURES • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V CDM EIA/JESD22-C101 exceeds 1000 V • Balanced propagation delays • All inputs have a Schmitt-trigger action • Inputs accepts voltages higher than VCC • For AHC only: operates with CMOS input levels • For AHCT only: operates with TTL input levels • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION The 74AHC/AHCT541 is a high-speed Si-gate CMOS device. The 74AHC/AHCT541 are octal non-inverting buffer/line drivers with 3-state bus compatible outputs. The 3-state outputs are controlled by the output enable inputs OE0 and OE1. A HIGH on OEn causes the outputs to assume a high-impedance OFF-state. QUICK REFERENCE DATA Ground = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; ∑ (CL × VCC2 × fo) = sum of outputs; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT AHC AHCT tPHL/tPLH propagation delay An to Yn CL = 15 pF; VCC = 5 V 3.5 3.5 ns CI input capacitance VI =VCC or GND 3 3 pF CO output capacitance 4.0 4.0 pF CPD power dissipation capacitance CL = 50 pF; f = 1 MHz; notes 1 and 2 10 12 pF |
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