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AD5243BRM10-RL7 Scheda tecnica(PDF) 3 Page - Analog Devices |
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AD5243BRM10-RL7 Scheda tecnica(HTML) 3 Page - Analog Devices |
3 / 20 page AD5243/AD5248 Rev. 0 | Page 3 of 20 ELECTRICAL CHARACTERISTICS—2.5 kΩ VERSION VDD = 5 V ± 10%, or 3 V ± 10%; VA = +VDD; VB = 0 V; −40°C < TA < +125°C; unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ1 Max Unit DC CHARACTERISTICS—RHEOSTAT MODE Resistor Differential Nonlinearity2 R-DNL RWB, VA = no connect −2 ±0.1 +2 LSB Resistor Integral Nonlinearity2 R-INL RWB, VA = no connect −6 ±0.75 +6 LSB Nominal Resistor Tolerance3 ∆RAB TA = 25°C −20 +55 % Resistance Temperature Coefficient (∆RAB/RAB )/∆T VAB = VDD, wiper = no connect 35 ppm/°C RWB (Wiper Resistance) RWB Code = 0x00, VDD = 5 V 160 200 Ω DC CHARACTERISTICS—POTENTIOMETER DIVIDER MODE (Specifications Apply to All VRs) Differential Nonlinearity4 DNL −1.5 ±0.1 +1.5 LSB Integral Nonlinearity INL −2 ±0.6 +2 LSB Voltage Divider Temperature Coefficient (∆VW/VW)/∆T Code = 0x80 15 ppm/°C Full-Scale Error VWFSE Code = 0xFF −10 −2.5 0 LSB Zero-Scale Error VWZSE Code = 0x00 0 2 10 LSB RESISTOR TERMINALS Voltage Range5 VA, VB, VW GND VDD V Capacitance6 A, B CA, CB f = 1 MHz, measured to GND, Code = 0x80 45 pF Capacitance6 W CW f = 1 MHz, measured to GND, Code = 0x80 60 pF Shutdown Supply Current7 IA_SD VDD = 5.5 V 0.01 1 µA Common-Mode Leakage ICM VA = VB = VDD/2 1 nA DIGITAL INPUTS AND OUTPUTS Input Logic High VIH VDD = 5 V 2.4 V Input Logic Low VIL VDD = 5 V 0.8 V Input Logic High VIH VDD = 3 V 2.1 V Input Logic Low VIL VDD = 3 V 0.6 V Input Current IIL VIN = 0 V or 5 V ±1 µA Input Capacitance6 CIL 5 pF POWER SUPPLIES Power Supply Range VDD RANGE 2.7 5.5 V Supply Current IDD VIH = 5 V or VIL = 0 V 3.5 6 µA Power Dissipation8 PDISS VIH = 5 V or VIL = 0 V, VDD = 5 V 30 µW Power Supply Sensitivity PSS VDD = 5 V ± 10%, Code = midscale ±0.02 ±0.08 %/% DYNAMIC CHARACTERISTICS 9 Bandwidth −3 dB BW_2.5 K Code = 0x80 4.8 MHz Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz 0.1 % VW Settling Time tS VA = 5 V, VB = 0 V, ±1 LSB error band 1 µs Resistor Noise Voltage Density eN_WB RWB = 1.25 kΩ, RS = 0 3.2 nV/ √Hz See notes at end of section. |
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