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GS81032AQ-6I Scheda tecnica(PDF) 11 Page - GSI Technology

Il numero della parte GS81032AQ-6I
Spiegazioni elettronici  32K x 32 1M Synchronous Burst SRAM
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Produttore elettronici  GSI [GSI Technology]
Homepage  http://www.gsitechnology.com
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GS81032AQ-6I Scheda tecnica(HTML) 11 Page - GSI Technology

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Rev: 1.01 7/2001
11/23
© 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS81032AT/Q-150/138/133/117/100/66
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
3. Output Load 2 for tLZ, tHZ, tOLZ, and tOHZ.
4. Device is deselected as defined by the Truth Table.
AC Test Conditions
Parameter
Conditions
Input high level
2.3 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
1.25 V
Output reference level
1.25 V
Output load
Fig. 1& 2
DC Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
(except mode pins)
IIL
VIN = 0 to VDD
–1 uA
1 uA
ZZ Input Current
IINZZ
VDD ≥ VIN ≥ VIH
0 V
≤ V
IN ≤ V
IH
–1 uA
–1 uA
1 uA
300 uA
Mode Pin Input Current
IINM
VDD ≥ VIN ≥ VIL
0 V
≤ V
IN ≤ V
IL
–300 uA
–1 uA
1 uA
1 uA
Output Leakage Current
IOL
Output Disable,
VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH
IOH = –4 mA, VDDQ = 2.375 V
1.7V
Output High Voltage
VOH
IOH = –4 mA, VDDQ = 3.135 V
2.4 V
Output Low Voltage
VOL
IOL = 4 mA
0.4 V
DQ
VT = 1.25 V
50
30pF*
DQ
2.5 V
Output Load 1
Output Load 2
225
225
5pF*
* Distributed Test Jig Capacitance


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