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GS78132AGB-8I Scheda tecnica(PDF) 7 Page - GSI Technology |
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GS78132AGB-8I Scheda tecnica(HTML) 7 Page - GSI Technology |
7 / 12 page tAA tRC Address tAC tLZ tAB tBLZ tOE tOLZ CE OE Data Out tHZ tBHZ tOHZ Data valid High impedance BA, BB, BC, BD GS78132AB Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.04 5/2006 7/12 © 2003, GSI Technology Read Cycle 2: WE = VIH * These parameters are sampled and are not 100% tested Write Cycle Parameter Symbol -8 -10 -12 Unit Min Max Min Max Min Max Write cycle time tWC 8 — 10 — 12 — ns Address valid to end of write tAW 5.5 — 7 — 8 — ns Chip enable to end of write tCW 5.5 — 7 — 8 — ns Data set up time tDW 4 — 5 — 6 — ns Data hold time tDH 0 — 0 — 0 — ns Write pulse width tWP 5.5 — 7 — 8 — ns Address set up time tAS 0 — 0 — 0 — ns Write recovery time (WE) tWR 0 — 0 — 0 — ns Write recovery time (CE) tWR1 0 — 0 — 0 — ns Output Low Z from end of write tWLZ* 3 — 3 — 3 — ns Write to output in High Z tWHZ* — 3.5 — 4 — 5 ns |
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