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E-LIS2L02AS4TR Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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E-LIS2L02AS4TR Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 14 page LIS2L02AS4 4/14 Table 4. Electrical Characteristics1 (Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless oth- erwise noted Notes: 1. The product is factory calibrated at 3.3V. 2. Typical specifications are not guaranteed 3. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2* π*110KΩ*Cload) with Cload>1nF 3 Absolute Maximum Rating Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Table 5. Absolute Maximum Rating Symbol Parameter Test Condition Min. Typ.2 Max. Unit Vdd Supply Voltage 2.4 3.3 5.25 V Idd Supply Current mean value PD pin connected to GND 0.85 1.5 mA IddPdn Supply Current in Power Down Mode rms value PD pin connected to Vdd 25 µA Vst Self Test Input Logic 0 level 0 0.8 V Logic 1 level 2.2 Vdd V Rout Output Impedance 80 110 140 k Ω Cload Capacitive Load Drive3 320 pF Ton Turn-On Time at exit from Power Down mode Cload in µF 550*Cload+0.3 ms Symbol Ratings Maximum Value Unit Vdd Supply Voltage -0.3 to 7 V Vin Input Voltage on any control pin (FS, PD, ST) -0.3 to Vdd +0.3 V APOW Acceleration (Any axis, Powered, Vdd=3.3V) 3000g for 0.5 ms 10000g for 0.1 ms AUNP Acceleration (Any axis, Not powered) 3000g for 0.5 ms 10000g for 0.1 ms TSTG Storage Temperature Range -40 to +125 °C ESD Electrostatic Discharge Protection 2 (HBM) kV 200 (MM) V 1500 (CDM) V This is an ESD sensitive device, improper handling can cause permanent damages to the part This is a Mechanical Shock sensitive device, improper handling can cause permanent damages to the part |
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