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1N4003ST Scheda tecnica(PDF) 1 Page - EIC discrete Semiconductors |
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1N4003ST Scheda tecnica(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page 1N4003ST SILICON RECTIFIER DIODE PRV : 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% SYMBOL VALUE UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 Volts Maximum RMS Voltage VRMS 140 Volts Maximum DC Blocking Voltage VDC 200 Volts Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C IF(AV) 1.0 Amp. Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 30 Amps. Maximum Forward Voltage at I F = 1.0 Amp. VF 1.1 Volts Maximum DC Reverse Current at rated DC Blocking Voltage IR 5.0 μA Typical Junction Capacitance (Note1) CJ 15 pF Typical Thermal Resistance (Note2) R θJA 26 °C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. Page 1 of 2 Rev. 02 : March 31, 2005 RATING DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) |
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