Motore di ricerca datesheet componenti elettronici |
|
1PS76SB21 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
|
1PS76SB21 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 May 05 3 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD323 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.2 IF =10mA − 300 mV IF = 100 mA − 420 mV IF = 200 mA − 550 mV IR reverse current VR = 30 V; note 1; see Fig.3 − 15 µA VR =30V;Tj = 100 °C; note 1; see Fig.3 − 3 mA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.4 40 50 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 450 K/W |
Codice articolo simile - 1PS76SB21 |
|
Descrizione simile - 1PS76SB21 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |