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1PS70SB82 Scheda tecnica(PDF) 4 Page - NXP Semiconductors |
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1PS70SB82 Scheda tecnica(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2001 Jan 18 4 Philips Semiconductors Product specification Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 handbook, halfpage 1.6 0 0.4 0.8 103 102 10 1 MGT835 1.2 VF (V) IF (mA) (2) (1) (3) (2) (1) (3) Fig.6 Forward current as a function of forward voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 05 10 VR (V) IR ( µA) 15 MGT836 103 102 10 1 10−1 10−2 (2) (1) (3) Fig.7 Reverse current as a function of reverse voltage; typical values. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. handbook, halfpage 0 1 0.8 0.6 0.4 2 Cd (pF) 10 MGT837 468 VR (V) Fig.8 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. handbook, halfpage 103 10 102 1 MGT838 10−1 1 r D ( Ω) 10 IF (mA) 102 Fig.9 Differential diode forward resistance as a function of forward current; typical values. f = 1 MHz; Tamb =25 °C. |
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