NE3509M04 datasheet(3/11 Pages) CEL

Il numero della parte	NE3509M04

Spiegazioni elettronici	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

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NE3509M04

TYPICAL CHARACTERISTICS TA = +25

°C)

Note) Under examination

Mounted on Glass Epoxy PCB

(1.08 cm

2 x 1.0mm(t) )

DRAIN CURRENT vs. GATE to SOURCE VOLTAGE

0

5

10

15

20

25

30

35

40

45

50

-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0

Gate to Source Voltage VGS (V)

VDS=2V

0

1

2

3

4

5

20

40

60

80

100

Drain to Source Voltage VDS (V)

VGS = 0 V

- 0.1 V

- 0.2 V

- 0.3 V

0

- 0.4 V

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

MINIMUM NOISE FIGURE, ASSOCIATED GAIN

vs. FREQUENCY

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

5

10

15

frequency (GHz)

0

2

4

6

8

10

12

14

16

18

20

VDS=2V, ID=10mA

NFmin

Ga

MINIMUM NOISE FIGURE, ASSOCIATED GAIN

vs. DREIN CURRENT

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

10

20

30

40

Drein Current ID (mA)

0

2

4

6

8

10

12

14

16

18

20

NFmin

Ga

f=2.0GHz, VDS=2V

MINIMUM NOISE FIGURE, ASSOCIATED GAIN

vs. DREIN TO SOURCE VOLTAGE

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

1.0

1.5

2.0

2.5

3.0

3.5

Drein to Source Voltage VDS (V)

0

2

4

6

8

10

12

14

16

18

20

NFmin

Ga

f=2.0GHz, IDS=10mA

- 0.5 V

Codice articolo simile - NE3509M04

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
California Eastern Labs	NE3509M04	284Kb / 9P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE3509M04-T2	284Kb / 9P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04-T2	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04-T2B	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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Descrizione simile - NE3509M04

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
California Eastern Labs	NE3509M04	284Kb / 9P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3510M04	216Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE34018	114Kb / 16P	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3508M04	213Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M04	217Kb / 12P	L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE38018	94Kb / 16P	L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3509M14	219Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
	NE3509M14	208Kb / 12P	N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
	NE3519M04	226Kb / 13P	N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
NEC	NE33284A	62Kb / 10P	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NE3509M04 Scheda tecnica(PDF) 3 Page - California Eastern Labs

NE3509M04 Scheda tecnica(HTML) 3 Page - California Eastern Labs

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