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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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M01N60 Scheda tecnica(PDF) 2 Page - Stanson Technology |
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M01N60 Scheda tecnica(HTML) 2 Page - Stanson Technology |
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2 / 5 page  N Channel MOSFET M01N60 1.0A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） *Pulse Test: Pulse Width ≦300μS, Duty Cycle ≦ 2% **Negligible, Dominated by circuit inductance PARAMETERS SYMBO L MIN TYP MAX UNIT CONDITION Drain-Source Breakdown Voltage V(BR)DSS 600 Vdc VGS=0, ID=250uA Drain-Source Leakage Current IDSS 1.0 0.25 mA mA VDS=600V, VGS=0 VDS=480V, VGS=0, Tj=125℃ Gate-Source Leakage Current- Forward IGSSF 100 nA VGSR=20V, VDS=0 Gate Threshhold Voltage VGS(th) 2.0 4.0 V VDS=VGS, ID=250uA Drain-Source On-Resistance RDS(on) 8 Ohm VGS=10V, ID=0.6A* Input Capacitance Ciss 210 pF Output Capacitance Coss 28 pF Reverse Transfer Capacitance Crss 9 pF VDS=25V, VGS=0, f=1 MHz Turn-On Delay Time ton 8 nS Turn-Off Delay Time toff 18 nS VDS=300V, ID=1.0A, Rise Time tr 21 nS Fall Time tf 24 nS VGS=10V, RG=18Ω Total Gate Charge Qg 8.5 nC Gate-Drain Charge Qgd 8.5 nC VDS=400V, ID=1.0A Gate-Drain Charge Qgs 1.8 nC VGS=10V* Intemal Drain Inductance LD 4.5 nH Measured from the drain lead 0.25’’ From package to center of die Internal Drain Inductance Ls 7.5 nH Measured from the sorce lead 0.25’’ package to source bond pad SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VDS 1.5 V Forward Tum Time ton ** nS Reverse Recovery Time trr 350 500 nS Is=1.0A, VGS=0V dIS/dt = 100A/μS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 |
Codice articolo simile - M01N60 |
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Descrizione simile - M01N60 |
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