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N08M163WL1AB Scheda tecnica(PDF) 1 Page - NanoAmp Solutions, Inc.

Il numero della parte N08M163WL1AB
Spiegazioni elettronici  8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
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Produttore elettronici  NANOAMP [NanoAmp Solutions, Inc.]
Homepage  http://www.nanoamp.com
Logo NANOAMP - NanoAmp Solutions, Inc.

N08M163WL1AB Scheda tecnica(HTML) 1 Page - NanoAmp Solutions, Inc.

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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08M163WL1A
Stock No. 23319-01 11/01/02
1
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
512Kx16 bit
Overview
The N08M163WL1A is an integrated memory
device intended for non life-support (Class 1 or
2) medical applications. This device is a 4
megabit memory organized as 524,288 words by
16 bits. The device is designed and fabricated
using NanoAmp’s advanced CMOS technology
with reliability inhancements for medical users. The
base design is the same as NanoAmp’s
N08M1618L2A, which has further reliability
processing for life-support (Class 3) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. Byte
controls (UB and LB) allow the upper and lower
bytes to be accessed independently and can also
be used to deselect the device. This device is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in a JEDEC standard BGA package
Features
• Single Wide Power Supply Range
2.3 to 3.6 Volts
• Very low standby current
4.0µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Very low Page Mode operating current
1.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.8V
• Special processing for Soft Error Rate (SER)
reduction
• Automatic power down to standby mode
• Compact space saving BGA package avail-
able
Pin Configurations
Product Family
Part Number
Package Type
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current (ISB),
Max
Operating
Current (Icc),
Max
N08M163WL1AB
48 - BGA
-40oC to +85oC
2.3V - 3.6V
70ns @ 2.7V
100ns @ 2.3V
20
µA3 mA @ 1MHz
N08M163WL1AD Known Good Die
12
345
6
A
LB
OE
A0
A1
A2
CE2
B I/O8 UB
A3
A4
CE1
I/O0
C I/O9 I/O10 A5
A6
I/O1
I/O2
D VSS I/O11 A17 A7 I/O3 VCC
E VCC I/O12 NC A16 I/O4 VSS
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 NC A12 A13 WE I/O7
H A18 A8
A9
A10
A11
NC
48 Pin BGA (top)
8 x 10 mm
Pin Descriptions
Pin Name
Pin Function
A0-A18
Address Inputs
WE
Write Enable Input
CE1, CE2
Chip Enable Input
OE
Output Enable Input
LB
Lower Byte Enable Input
UB
Upper Byte Enable Input
I/O0-I/O15
Data Inputs/Outputs
VCC
Power
VSS
Ground
NC
Not Connected


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