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STK850 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STK850 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STK850 4/12 Table 6. Source drain diode (1)Pulse width limited by package (2) When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10sec (3) Steady State (4) Measured at Source pin when the device is mounted on FR-4 board in steady state (5) Pulsed: pulse duration = 300µs, duty cycle 1.5% PolarPAK is SILICONIX Trademark Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Note 1 Source-drain Current Source-drain Current (pulsed) 30 120 A A VSD Note 5 Forward on Voltage ISD= 15A, VGS=0 1.2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD= 30A, di/dt = 100A/µs, VDD=20V, Tj=150°C (see Figure 15) 39 39.8 2 ns nC A |
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