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FQD3N60CTF Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FQD3N60CTF Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com 600V N-Channel MOSFET REV. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.4A, VDD = 50V, L=47mH, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FQD3N60C FQD3N60CTM D-PAK 380mm 16mm 2500 FQD3N60C FQD3N60CTF D-PAK 380mm 16mm 2000 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 600 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.6 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 1.2A -- 2.8 3.4 Ω gFS Forward Transconductance VDS = 40V, ID = 1.2A (Note 4) -- 3.5 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 435 565 pF Coss Output Capacitance -- 45 60 pF Crss Reverse Transfer Capacitance -- 5 8 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300V, ID = 3A RG = 25Ω (Note 4, 5) -- 12 34 ns tr Turn-On Rise Time -- 30 70 ns td(off) Turn-Off Delay Time -- 35 80 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = 480V, ID = 3A VGS = 10V (Note 4, 5) -- 10.5 14 nC Qgs Gate-Source Charge -- 2.1 -- nC Qgd Gate-Drain Charge -- 4.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 12 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.4A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 3A dIF/dt =100A/µs (Note 4) -- 260 -- ns Qrr Reverse Recovery Charge -- 1.6 -- µC |
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