2SD1253 datasheet(2/2 Pages) PANASONIC

Il numero della parte	2SD1253

Spiegazioni elettronici	Silicon NPN triple diffusion planar type(For power amplification)

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Produttore elettronici	PANASONIC [Panasonic Semiconductor]

Homepage	http://www.panasonic.com/industrial/

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2

Power Transistors

2SD1253, 2SD1253A

PC —Ta

IC —VCE

IC —VBE

VCE(sat) —IC

hFE —IC

fT —IC

Area of safe operation (ASO)

Rth(t) —t

0

160

40

120

80

140

20

100

60

0

50

40

30

20

10

(1) T

C=Ta

(2) With a 50

× 50 × 2mm

Al heat sink

(3) Without heat sink

(P

C=1.3W)

(1)

(2)

(3)

Ambient temperature Ta (˚C)

020

16

412

8

0

6

5

4

3

2

1

I

B=150mA

T

C=25˚C

100mA

80mA

60mA

40mA

30mA

20mA

10mA

5mA

Collector to emitter voltage V

CE

(V)

02.4

2.0

1.6

0.4

1.2

0.8

0

8

6

2

5

7

4

1

3

V

CE=4V

T

C=100˚C

25˚C

–25˚C

Base to emitter voltage V

BE

(V)

0.01

0.1

1

10

0.03

0.3

3

0.01

0.03

0.1

0.3

1

3

10

30

100

I

C/IB=10

T

C=100˚C

25˚C

–25˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

1

3

10

30

100

300

1000

3000

10000

V

CE=4V

T

C=100˚C

25˚C

–25˚C

Collector current I

C

(A)

0.01

0.1

1

10

0.03

0.3

3

1

3

10

30

100

300

1000

3000

10000

V

CE=10V

f=1MHz

T

C=25˚C

Collector current I

C

(A)

1

10

100

1000

3

30

300

0.01

0.03

0.1

0.3

1

3

10

30

100

Non repetitive pulse

T

C=25˚C

I

CP

I

C

t=10ms

300ms

1ms

Collector to emitter voltage V

CE

(V)

10–4

10

10–3

10–1

10–2

1103

102

104

10–2

10–1

1

10

103

102

(1) Without heat sink

(2) With a 50

× 50 × 2mm Al heat sink

(1)

(2)

Time t (s)

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