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74V2T14STR Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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74V2T14STR Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 7 page 74V2T14 3/7 DC SPECIFICATIONS AC ELECTRICAL CHARACTERISTICS (Input tr =tf =3ns) (*) Voltage range is 5.0V ± 0.5V CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) =CPD xVCC xfIN +ICC/3 Symbol Parameter Test Condition Value Unit VCC (V) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. Vt+ High Level Threshold Voltage 4.5 0.9 2.0 0.9 2.0 0.9 2.0 V 5.5 1.1 2.0 1.1 2.0 1.1 2.0 Vt- Low Level Threshold Voltage 4.5 0.5 1.5 0.5 1.5 0.5 1.5 V 5.5 0.6 1.6 0.6 1.6 0.6 1.6 Vh Hysteresis Voltage 4.5 0.4 1.4 0.4 1.4 0.4 1.4 V 5.5 0.5 1.6 0.5 1.6 0.5 1.6 VOH High Level Output Voltage 4.5 IO=-50 µA 4.4 4.5 4.4 4.4 V 4.5 IO=-8 mA 3.94 3.8 3.7 VOL Low Level Output Voltage 4.5 IO=50 µA 0.0 0.1 0.1 0.1 V 4.5 IO=8 mA 0.36 0.44 0.55 II Input Leakage Current 0to 5.5 VI = 5.5V or GND ± 0.1 ± 1.0 ± 1.0 µA ICC Quiescent Supply Current 5.5 VI =VCC or GND 110 20 µA +ICC Additional Worst Case Supply Current 5.5 One Input at 3.4V, other input at VCC or GND 1.35 1.5 1.5 mA Symbol Parameter Test Condition Value Unit VCC (V) CL (pF) TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. tPLH tPHL Propagation Delay Time 5.0 (*) 15 5.0 7.5 1.0 9.0 1.0 10.5 ns 5.0 (*) 50 6.5 8.5 1.0 10.0 1.0 11.5 Symbol Parameter Test Condition Value Unit TA = 25°C -40 to 85°C -55 to 125°C Min. Typ. Max. Min. Max. Min. Max. CIN Input Capacitance 410 10 10 pF CPD Power Dissipation Capacitance (note 1) 14 pF |
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