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TS650 Scheda tecnica(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS650 Scheda tecnica(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 4 page TS650 2-4 2003/12 rev. A Absolute Maximum Rating Supply Voltage VCC 30 V Comparator Input Voltage Range VFB - 0.3 ~ 30 V Collector Output Voltage VC(SW) 30 V Collector to Emitter Voltage VCE(SW) 30 V Output Switching Current ISW 500 mA Operating Junction Temperature Range TJ -20 ~ +125 oC Storage Temperature Range TSTG -65 ~ +150 oC Lead Temperature 1.6mm(1/16”) from case for 10Sec. TLEAD 260 oC Electrical Characteristics (VCC =5V, Ta =25 oC; unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Unit Reference Comp. Connect to FB 1.23 1.25 1.27 V Ta= -20 oC ~ 25 oC - 0.1 1 Output voltage change with temperature VREF Ta= 25 oC ~ 85 oC - 0.2 1 % Line regulation RegLine VCC = 5V ~ 30V 5 mV Output switch (note1) Saturation Voltage VCE(SAT) ISW =0.5A 1.0 1.2 V DC current gain HFE ISW =1A, Vce=0.5V 75 -- Collector off-state current IC(OFF) Vce=30V 40 100 uA Oscillator (OSC) Frequency FOSC CT = 1nF, Vpin5=0V 24 33 42 KHz Charge Current ICHARGE VCC = 5V ~ 30V 35 uA Discharge Current IDISCHARGE VCC = 5V ~ 30V 220 uA Discharge to Charge current ratio IDISCHARGE / ICHARGE Pin7 to Vcc 6.5 -- Current Limit Sense Voltage VIPK(SENSE) IDISCHARGE = ICHARGE 250 350 mV ON/OFF driver control ON driver voltage Von 4 5 V OFF driver voltage Voff 1 V ON driver current Ion VCC = 3V ~ 30V 100 mA Total device supply current ICC VCC = 5V ~ 30V, CT = 1nF, pin7=Vcc, pin5>Vth, pin2=Gnd, remaining pins open 3 5 mA Input bias current IIB Vin=0V -400 nA Note 1: Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient temperature. |
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