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FM150-M-R Scheda tecnica(PDF) 1 Page - Formosa MS

Il numero della parte FM150-M-R
Spiegazioni elettronici  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
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Produttore elettronici  FORMOSA [Formosa MS]
Homepage  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM150-M-R Scheda tecnica(HTML) 1 Page - Formosa MS

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FM120-M-R THRU FM1100-M-R
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123 / MINISMA
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.04 gram
(V)
(V)
(V)
(V)
(oC)
FM120-M-R
12
20
14
20
FM130-M-R
13
30
21
30
FM140-M-R
14
40
28
40
FM150-M-R
15
50
35
50
FM160-M-R
16
60
42
60
FM180-M-R
18
80
56
80
FM1100-M-R
10
100
70
100
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.50
0.70
0.85
-55 to +125
-55 to +150
MAXIMUM RATINGS (AT T A=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
30
A
VR = VRRM TA = 25oC
0.1
mA
VR = VRRM TA = 125oC
2.0
mA
Thermal resistance
Junction to ambient
RqJA
98
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
120
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-123


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