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FQP6N50C Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FQP6N50C Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page 4 www.fairchildsemi.com FQP6N50C Rev. A Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : ※ 1. V GS = 0 V 2. I D = 250 µ A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : ※ 1. V GS = 10 V 2. I D = 2.8 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) Notes : ※ 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 1.5 3.0 4.5 6.0 T C, Case Temperature [ ] ℃ 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 Notes : ※ 1. Z θ JC(t) = 1.28 /W M ax. ℃ 2. D uty Factor, D =t 1/t2 3. T JM - T C = P DM * Z θ JC(t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1, S q uar e W a v e P u ls e D u r a tion [s ec] |
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